Zn₂Sn₄O₁₀ is a mixed-metal oxide semiconductor compound combining zinc and tin oxides, belonging to the family of transparent conducting oxides (TCOs) and wide-bandgap semiconductors. This material is primarily of research and emerging technological interest, with potential applications in optoelectronic devices, gas sensors, and thin-film transistors where its optical transparency and semiconducting properties offer advantages over conventional alternatives like indium tin oxide (ITO) in cost-sensitive or indium-scarce applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 11,250.1 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 4,916.8 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.041 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.554 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data