Zn₂Sn₂F₈ is a fluoride-based semiconductor compound combining zinc and tin with fluorine, representing an emerging class of halide semiconductors under investigation for optoelectronic and photonic applications. This material family is of primary research interest rather than established industrial production, with potential advantages in tunable bandgap, transparency in certain spectral regions, and compatibility with thin-film processing techniques compared to conventional oxide or chalcogenide semiconductors. Engineering interest centers on exploring whether fluoride semiconductors can enable novel device architectures in UV-visible detection, scintillation, or solid-state lighting where conventional materials face performance trade-offs.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 7,643.5 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 3,831.9 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.491 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.421 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data