Zn₂Si₄Sn₂O₁₂ is a mixed-metal oxide semiconductor compound containing zinc, silicon, tin, and oxygen in a defined stoichiometric ratio. This material belongs to the family of complex oxide semiconductors and is primarily investigated in research contexts for optoelectronic and electronic device applications. While not yet widely commercialized, compounds in this family are of interest for wide-bandgap semiconductor applications, photocatalysis, and advanced ceramic electronics where the combination of these metal cations can provide tailored electrical and optical properties.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.553 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.284 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data