Zn₂Sb₄O₁₂ is an oxide semiconductor compound combining zinc and antimony oxides, belonging to the broader family of metal oxide semiconductors studied for advanced electronic and photonic applications. This material is primarily of research interest rather than established commercial production, being investigated for potential use in optoelectronic devices, gas sensing, and photocatalytic applications where its bandgap and crystal structure offer advantages over conventional oxide semiconductors. Engineers consider such ternary oxide semiconductors when seeking alternatives to binary oxides that provide tunable electronic properties or improved performance in sensing and light-emission contexts.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 19,530.2 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 10,987 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.176 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.419 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data