Zn₂In₄Se₈ is a ternary semiconductor compound belonging to the I-III-VI₂ family, combining zinc and indium cations with selenium anions in a layered crystal structure. This material is primarily investigated in research settings for optoelectronic and photovoltaic applications, where its tunable bandgap and layer-dependent electronic properties make it attractive for next-generation thin-film devices and quantum-confined systems. Compared to binary semiconductors like CdSe or traditional III-V compounds, Zn₂In₄Se₈ offers compositional flexibility and potential cost advantages, though it remains largely in the development phase rather than established high-volume production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7569 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5420 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data