Zn₂In₄S₈ is a quaternary semiconductor compound belonging to the I-III-VI family of chalcogenides, combining zinc, indium, and sulfur in a specific stoichiometric ratio. This material is primarily investigated in research and development contexts for optoelectronic and photovoltaic applications, where its direct bandgap and crystalline structure make it relevant for light emission, detection, and energy conversion devices. Compared to binary semiconductors like ZnS or In₂S₃, this ternary composition offers tunable electronic properties and potential advantages in solar cells, photodetectors, and light-emitting devices, though it remains largely in the experimental phase for commercial deployment.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,969.2 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 2,566.2 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.4646 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6310 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data