Zn2 In4 O8
semiconductorZn₂In₄O₈ is an n-type semiconductor oxide compound belonging to the spinel family, combining zinc and indium oxides in a crystalline ceramic structure. This material is primarily of research and emerging-technology interest rather than established industrial production, with potential applications in transparent electronics, gas sensors, and thin-film device layers where its wide bandgap and electrical properties may offer advantages over conventional alternatives like indium tin oxide (ITO). The compound represents a design space for engineers exploring cost-effective or performance-enhanced substitutes in optoelectronic and sensing systems, though maturity and scalability remain considerations versus mature semiconductor oxides.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |