Zn₂Ge₂As₄ is a quaternary III-V semiconductor compound belonging to the zinc germanium arsenide family, characterized by a direct bandgap structure that makes it suitable for optoelectronic applications. This material is primarily investigated in research contexts for infrared detection and emission devices, as well as potential applications in high-frequency electronics where its semiconductor properties offer advantages over binary or ternary compounds. Compared to simpler III-V semiconductors, quaternary compounds like Zn₂Ge₂As₄ enable bandgap engineering and lattice-matching flexibility, making them candidates for specialized devices where performance optimization across multiple parameters is critical.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 8,774.8 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 5,531.7 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.4501 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.1520 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data