Zn2 Ge2 As4
semiconductor· Zn2 Ge2 As4
Zn₂Ge₂As₄ is a quaternary III-V semiconductor compound belonging to the zinc germanium arsenide family, characterized by a direct bandgap structure that makes it suitable for optoelectronic applications. This material is primarily investigated in research contexts for infrared detection and emission devices, as well as potential applications in high-frequency electronics where its semiconductor properties offer advantages over binary or ternary compounds. Compared to simpler III-V semiconductors, quaternary compounds like Zn₂Ge₂As₄ enable bandgap engineering and lattice-matching flexibility, making them candidates for specialized devices where performance optimization across multiple parameters is critical.
Infrared detectors and sensorsOptoelectronic devicesHigh-frequency semiconductor electronicsResearch and development materialsBandgap-engineered applicationsSpecialized photonic components
Compliance & Regulations
?ITAR?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
Quality & Standards
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.