Zn₂GeS₄ is a quaternary semiconductor compound belonging to the II-IV-VI₂ family, composed of zinc, germanium, and sulfur. This material is primarily explored in research and developmental applications for optoelectronic and photonic devices, where its direct bandgap and crystalline structure make it a candidate for light emission, detection, and nonlinear optical applications. Compared to more established semiconductors like GaAs or ZnSe, Zn₂GeS₄ offers potential advantages in cost and availability of constituent elements, though it remains less commercialized and is the subject of ongoing materials characterization and device development work.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 6,637.9 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 4,122 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.255 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6580 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data