Zn₂Bi₄O₈ is a ternary oxide semiconductor composed of zinc and bismuth, belonging to the class of mixed-metal oxides with potential photocatalytic and optoelectronic properties. This compound is primarily investigated in research contexts for applications requiring semiconductor behavior, particularly where bismuth-containing oxides offer advantages in bandgap engineering or visible-light activity. Its industrial adoption remains limited compared to established semiconductors, but the material family shows promise in photocatalysis, gas sensing, and advanced electronic devices where the combined properties of zinc and bismuth oxides provide functional benefits over single-component alternatives.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 16,510.1 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 6,233.7 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.6101 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.224 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data