Zn₂Bi₄O₁₀ is an oxide semiconductor compound combining zinc and bismuth oxides, belonging to the family of mixed-metal oxides that exhibit semiconducting properties. This material is primarily explored in photocatalytic and optoelectronic applications, particularly for environmental remediation and energy conversion, where its layered crystal structure and bandgap characteristics make it competitive with more traditional semiconductors like TiO₂ or BiVO₄. Its bismuth-oxide base provides inherent advantages in visible-light absorption compared to purely zinc-based alternatives, positioning it as a research-focused material for next-generation photocatalysts and potential photovoltaic devices.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 8,181.7 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 3,287.6 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02160 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.064 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data