Zn2B16H16N8 is a boron-nitrogen compound with zinc incorporation, belonging to the family of boron nitride-based semiconductors that are being explored as wide-bandgap semiconductor materials. This is a research-phase compound rather than a commercially established material; the boron-nitrogen framework offers theoretical potential for high-temperature electronics and optoelectronic applications due to the chemical stability and wide bandgap characteristics typical of BN-derived systems. The zinc incorporation may be investigated for bandgap engineering or to enhance specific electronic or thermal properties compared to pure boron nitride phases.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00780 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.9380 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data