Zn₂As₄Sn₂ is a ternary semiconductor compound combining zinc, arsenic, and tin elements, belonging to the family of mixed-valence semiconductors with potential applications in optoelectronic and thermoelectric devices. This material is primarily of research interest rather than established industrial production, with investigation focused on its electronic band structure and thermal transport properties for next-generation energy conversion and light-emission applications. Engineers would consider this compound where alternative semiconductors (such as traditional III-V or II-VI compounds) are limited by cost, toxicity, or performance constraints, particularly in exploratory projects requiring materials with tunable optical or thermoelectric characteristics.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 54.57 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 31.42 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1185 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.1790 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data