Zn₂As₂O₇ is a mixed-metal oxide semiconductor compound combining zinc and arsenic oxides, belonging to the family of binary and ternary oxide semiconductors. This material is primarily of research and development interest for optoelectronic and photonic applications, where its bandgap and crystal structure make it a candidate for ultraviolet or visible-range light emission and detection. While not yet a mainstream commercial material, compounds in this zinc-arsenic oxide family are investigated as alternatives to conventional wide-bandgap semiconductors in specialized applications where specific optical or electrical properties are required.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.025 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.367 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data