Zn₁W₂N₂ is a ternary nitride semiconductor compound combining zinc and tungsten in a layered crystal structure. This is a research-phase material being investigated for advanced semiconductor and optoelectronic applications, particularly where wide bandgap properties and chemical stability are advantageous. The tungsten-nitride framework provides potential for high-temperature electronics, catalysis, or next-generation photonic devices, though industrial adoption remains limited compared to established nitride semiconductors like GaN or AlN.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 160.7 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 23.29 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00180 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.3180 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data