Zn₁V₂O₆ is a ternary metal oxide semiconductor compound combining zinc and vanadium oxides. This material is primarily investigated in research contexts for applications requiring mixed-valent transition metal oxides with tunable electronic properties. The zinc-vanadium oxide system is of interest for energy storage, catalysis, and optoelectronic devices due to the redox activity of vanadium and the structural diversity achievable through varying composition ratios.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 15,375.6 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 6,925.1 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.203 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.267 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data