Zn1 Sn1 O3

semiconductor

· Zn1 Sn1 O3

Zn₁Sn₁O₃ is a ternary oxide semiconductor compound combining zinc and tin in a 1:1 ratio with oxygen. This material is primarily of research interest for transparent conducting oxides (TCOs) and optoelectronic applications, offering potential as an alternative to conventional indium tin oxide (ITO) in contexts where indium scarcity or cost is a constraint.

transparent conducting oxidesthin-film electronicsoptoelectronic devicessolar cells and photovoltaicsdisplay technologiesresearch and development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	22,732.2	ksi	DFT · OptB88vdW
Shear Modulus(G)	8,827	ksi	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.1473	eV	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.9810	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Zn1 Sn1 O3 — Properties & Data | MatWorld

Zn1 Sn1 O3

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control