Zn₁Sb₄O₈ is an antimony-zinc oxide semiconductor compound belonging to the family of mixed-metal oxides with potential applications in electronic and optoelectronic devices. This material is primarily of research interest rather than established in high-volume production; it is studied for its semiconducting properties and potential use in applications requiring wide-bandgap semiconductors or functional oxide electronics. The zinc-antimony-oxygen system is explored in the research community for photocatalytic, gas-sensing, and thin-film transistor applications, where engineers seek alternatives to more conventional wide-bandgap materials.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 9,274.3 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 5,370.3 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.488 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.387 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data