Zn₁Rh₁O₃ is an experimental mixed-metal oxide semiconductor combining zinc and rhodium in a perovskite-related structure. This compound is primarily of research interest for photocatalytic and optoelectronic applications, exploiting the electronic properties that arise from the combination of a wide-bandgap oxide (ZnO) with the transition metal rhodium to enable visible-light activity or enhanced charge separation. The material represents an emerging class of doped or heterostructured semiconductors being investigated for environmental remediation and energy conversion, though it remains largely outside mainstream industrial production and deployment.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01530 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4670 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data