Zn1 Os1 O3 — Properties & Data | MatWorld

Zn1 Os1 O3

semiconductor

· Zn1 Os1 O3

ZnOsO₃ is an experimental mixed-metal oxide semiconductor combining zinc and osmium in a perovskite-related crystal structure. This compound remains primarily in research phase, with potential applications in high-temperature electronics, catalysis, and materials science exploration due to the unusual combination of a common semiconductor element (zinc oxide) with a precious transition metal (osmium).

research semiconductorshigh-temperature electronicscatalytic materialstransition metal oxidesexploratory materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01050	eV	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.7120	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Zn1 Os1 O3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control