Zn1 Os1 O3
semiconductor· Zn1 Os1 O3
ZnOsO₃ is an experimental mixed-metal oxide semiconductor combining zinc and osmium in a perovskite-related crystal structure. This compound remains primarily in research phase, with potential applications in high-temperature electronics, catalysis, and materials science exploration due to the unusual combination of a common semiconductor element (zinc oxide) with a precious transition metal (osmium).
research semiconductorshigh-temperature electronicscatalytic materialstransition metal oxidesexploratory materials
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.