Zn₁In₂Te₄ is a ternary semiconductor compound belonging to the II-III-VI family, combining zinc and indium with tellurium to form a direct-bandgap material. This compound is primarily of research and developmental interest for optoelectronic and photovoltaic applications, where its electronic structure offers potential advantages in light emission, detection, and energy conversion across infrared to visible wavelengths. While not yet established in high-volume manufacturing, materials in this family are investigated as alternatives to conventional binary semiconductors for specialized detector arrays, solar cells, and laser diodes where tunable bandgap or lattice-matched heterostructures with other III-V or II-VI compounds are advantageous.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 4,117.5 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 2,432.7 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7706 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3600 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data