Zn₁In₂S₄ is a ternary semiconductor compound belonging to the I-III-VI family of materials, combining zinc, indium, and sulfur in a layered crystal structure. This material is primarily explored in research contexts for optoelectronic and photovoltaic applications, where its direct bandgap and tunable electronic properties make it attractive for thin-film devices, photocatalysis, and next-generation solar cells. Compared to binary semiconductors like CdS or ZnS, the ternary composition allows fine-tuning of band structure and optical absorption, positioning it as a promising candidate for flexible electronics and quantum-confined nanostructures, though industrial adoption remains limited.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 48.21 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 20.19 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.5177 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6380 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data