Zn₁Ga₃ is a compound semiconductor formed from zinc and gallium, belonging to the III-V semiconductor family with zinc substituting for a typical group II element. This material is primarily of research and development interest for optoelectronic and high-frequency electronic applications, where III-V compounds offer superior electron mobility and direct bandgap properties compared to silicon. Its potential lies in specialized photonic devices and high-speed transistors, though it remains less commercially established than conventional III-V materials like GaAs or InGaAs.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00350 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.06100 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data