Zn₁Ga₂Se₄ is a ternary II-VI semiconductor compound combining zinc, gallium, and selenium in a defect tetrahedral crystal structure. This material is primarily of research interest for optoelectronic and photovoltaic applications, where its direct bandgap and tunable electronic properties position it as a candidate for solar cells, photodetectors, and light-emitting devices. While not yet widely commercialized compared to binary semiconductors like GaAs or CdSe, ternary chalcogenides like Zn₁Ga₂Se₄ offer design flexibility for bandgap engineering and potential advantages in radiation hardness and thermal stability for space and high-energy applications.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 6,141.5 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 3,980.9 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.408 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6470 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data