ZnGa₂S₄ is a ternary II-III-VI semiconductor compound combining zinc, gallium, and sulfur into a direct bandgap material. This is a research-phase compound being investigated for optoelectronic and photonic applications where its tunable bandgap and crystalline structure offer potential advantages over binary semiconductors like GaAs or ZnS in specific spectral regions.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 49.49 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 32.55 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.295 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8070 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data