Zn1 Ga1 O3
semiconductorZnGaO₃ is a ternary oxide semiconductor compound combining zinc and gallium oxides, belonging to the wider family of transparent conducting oxides (TCOs) and wide-bandgap semiconductors. This material is primarily investigated in research and emerging applications for optoelectronic devices, including ultraviolet (UV) photodetectors, transparent electronics, and potential next-generation display or sensor applications where conventional semiconductors face limitations. ZnGaO₃ offers potential advantages over binary oxides (such as ZnO or Ga₂O₃ alone) due to tunable bandgap and enhanced electrical properties, though it remains largely in the experimental stage compared to more established wide-bandgap materials like GaN.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |