Zn₁Cd₁Se₂ is a ternary II-VI semiconductor compound combining zinc, cadmium, and selenium in a mixed-cation chalcogenide structure. This material is primarily of research and development interest for optoelectronic and photonic applications where tunable bandgap and direct band-to-band transitions are advantageous; it represents an intermediate composition between binary ZnSe and CdSe semiconductors, offering potential for engineering custom electronic properties without the toxicity concerns of pure cadmium compounds in some formulations.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 53.41 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 20.71 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.6374 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6410 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data