Zn1Cd1S2 is a ternary II-VI semiconductor compound combining zinc, cadmium, and sulfur, representing a mixed-cation variant of the zinc blende structure family. This material is primarily of research and developmental interest for optoelectronic applications, particularly where tunable bandgap properties and photoluminescence are desired; it bridges the properties of binary ZnS and CdS semiconductors, offering potential advantages in photodetectors, scintillation devices, and quantum dot applications where composition engineering enables bandgap optimization.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 64.07 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 24.44 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.373 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7630 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data