Zn₁Bi₄O₈ is an oxide semiconductor compound combining zinc and bismuth, belonging to the family of ternary metal oxides used in functional and optoelectronic applications. This material is primarily investigated in research contexts for photocatalytic degradation of pollutants, gas sensing, and visible-light-driven catalysis, where the bismuth oxide component enhances light absorption in the visible spectrum compared to pure zinc oxide alternatives. Its mixed-valence oxide structure makes it particularly relevant for applications requiring band gap engineering and catalytic activity tuning.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 8,963.3 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 4,313.4 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01590 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.196 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data