Zn₁Bi₁F₆ is a mixed-metal fluoride semiconductor compound combining zinc and bismuth in an anionic fluoride framework. This is a research-phase material being investigated for potential optoelectronic and photovoltaic applications, representing an emerging class of halide semiconductors that could offer alternatives to lead-based perovskites with improved environmental and toxicity profiles. The bismuth-zinc combination is notable for exploring lead-free semiconductor chemistries with tunable band gaps and potentially superior stability compared to conventional hybrid perovskites.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 28.41 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 25.13 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.04660 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.231 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data