ZnBSe₂ is a wide-bandgap II-VI semiconductor compound combining zinc, boron, and selenium elements. This material belongs to the family of ternary semiconductors and is primarily of research interest for optoelectronic and photonic applications requiring wide-bandgap semiconductors. The material is notable for potential applications in ultraviolet light emission, high-temperature electronics, and radiation-hard devices, though it remains largely in the experimental phase compared to more established wide-gap semiconductors like ZnSe or GaN.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00880 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.091 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data