Zn0.9Hg0.1Te1

semiconductor

· Zn0.9Hg0.1Te1

Zn₀.₉Hg₀.₁Te is a narrow-bandgap semiconductor alloy within the II-VI compound family, created by substituting mercury into zinc telluride. This material is primarily of research and developmental interest rather than mainstream production, valued for its tunable electronic properties in the infrared spectrum achieved through mercury alloying. Applications center on infrared detection and sensing at wavelengths where conventional semiconductors are ineffective, with potential in thermal imaging, spectroscopy, and space-based remote sensing systems.

infrared detectorsthermal imaging sensorsspectroscopic instrumentationspace optoelectronicsresearch photodetectorscryogenic IR applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.740	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Zn0.9Hg0.1Te1

Electrical Properties

Regulatory Screening

Environmental

Export Control