Zn0.9Hg0.1Se

Zn₀.₉Hg₀.₁Se is a wide-bandgap II-VI semiconductor alloy formed by partial substitution of zinc with mercury in zinc selenide, creating a tunable electronic structure. This material is primarily investigated in research contexts for infrared optoelectronics and photonic devices, where the mercury content shifts the bandgap energy to enable detection and emission in the mid-to-long-wavelength infrared region—a capability difficult to achieve with pure ZnSe alone. Engineers select this alloy family when conventional semiconductors cannot address specific wavelength requirements in thermal imaging, gas sensing, or space-based optical systems.