Zn0.99Ga0.01Sb0.01Te0.99
semiconductor· Zn0.99Ga0.01Sb0.01Te0.99
Zn₀.₉₉Ga₀.₀₁Sb₀.₀₁Te₀.₉₉ is a heavily tellurium-based narrow-bandgap semiconductor alloy with minor gallium and antimony dopants, belonging to the II-VI compound semiconductor family. This is a research-stage material designed for infrared detection and thermal imaging applications, where the band-gap engineering from gallium and antimony doping modifies the electronic properties of base ZnTe to achieve sensitivity in the mid- to long-wave infrared spectrum. The composition trades off between lattice-matched performance, thermal stability, and fabrication complexity compared to conventional HgCdTe and InSb detectors.
infrared photodetectorsthermal imaging sensorsband-gap engineering researchnarrow-bandgap semiconductorsspace/defense sensingcryogenic detector applications
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.