Zn0.99Ga0.01P0.01S0.99
semiconductor· Zn0.99Ga0.01P0.01S0.99
Zn₀.₉₉Ga₀.₀₁P₀.₀₁S₀.₉₉ is a wide-bandgap II-VI semiconductor compound, essentially zinc sulfide doped with trace gallium and phosphorus. This is a research-phase material being explored for optoelectronic and photonic device applications where the dopants modify the bandgap and electronic properties of the ZnS host lattice. The primary interest lies in leveraging the improved carrier mobility and modified optical characteristics for ultraviolet light emission, high-efficiency detectors, and potentially high-power/high-temperature electronic devices where conventional ZnS falls short.
UV light-emitting devicesphotodetectors and sensorshigh-temperature semiconductorsresearch optoelectronicswide-bandgap device engineering
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.