Zn₀.₉₉Ga₀.₀₁P₀.₀₁S₀.₉₉ is a wide-bandgap II-VI semiconductor compound, essentially zinc sulfide doped with trace gallium and phosphorus. This is a research-phase material being explored for optoelectronic and photonic device applications where the dopants modify the bandgap and electronic properties of the ZnS host lattice. The primary interest lies in leveraging the improved carrier mobility and modified optical characteristics for ultraviolet light emission, high-efficiency detectors, and potentially high-power/high-temperature electronic devices where conventional ZnS falls short.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.700 | eV | — |