Zn0.92Hg0.08Te1

semiconductor
· Zn0.92Hg0.08Te1

Zn₀.₉₂Hg₀.₀₈Te is a mercury-doped zinc telluride compound semiconductor, part of the II-VI semiconductor family used for infrared detection and sensing applications. This material is primarily of research and specialized industrial interest, where the mercury doping modifies the bandgap to enable mid-infrared responsiveness; it finds use in thermal imaging, gas sensing, and military/aerospace infrared systems where conventional semiconductors are insufficient. The mercury alloying trades conventional room-temperature performance for enhanced infrared sensitivity, making it valuable in niche markets where cost and complexity are secondary to detection capability.

infrared detectorsthermal imaging sensorsmid-IR spectroscopygas sensingmilitary/aerospace opticsresearch optoelectronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
PropertyValueUnitConditionsSource
Band Gap(Eg)
eV
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Regulatory Screening

Environmental

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