Zn0.8Hg0.2Te1

semiconductor

· Zn0.8Hg0.2Te1

Zn₀.₈Hg₀.₂Te is a cadmium-free II-VI semiconductor alloy composed of zinc telluride with 20% mercury substitution, belonging to the narrow-bandgap semiconductor family. This material is primarily investigated for infrared (IR) detection and imaging applications, where its narrow bandgap enables sensitivity in the mid-to-long-wavelength IR spectrum; it represents an alternative composition strategy in the HgCdTe family for thermal imaging and spectroscopic sensing without relying on cadmium. While not widely commercialized compared to established IR detector materials, zinc-mercury-tellurium alloys are of research and development interest for cost-reduction and environmental compliance in next-generation thermal cameras, forward-looking infrared (FLIR) systems, and space-borne spectroscopy.

infrared detectorsthermal imaging systemsspace spectroscopynarrow-bandgap semiconductorscadmium-free alternatives

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.400	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Zn0.8Hg0.2Te1

Electrical Properties

Regulatory Screening

Environmental

Export Control