Zn0.86Hg0.14Te1

semiconductor

· Zn0.86Hg0.14Te1

Zn₀.₈₆Hg₀.₁₄Te is a cadmium-free II-VI semiconductor alloy based on zinc telluride with mercury substitution, designed to tune the bandgap for infrared and visible optoelectronic applications. This material is primarily of research and specialized industrial interest, used in infrared detectors, thermal imaging systems, and photovoltaic devices where bandgap engineering is critical; the mercury content narrows the bandgap compared to pure ZnTe, making it suitable for mid- to long-wavelength infrared sensing where alternatives like HgCdTe may be restricted due to toxicity or cost concerns.

infrared detectorsthermal imaging sensorsphotovoltaic researchbandgap-engineered optoelectronicsmercury telluride alloysII-VI semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.660	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Zn0.86Hg0.14Te1

Electrical Properties

Regulatory Screening

Environmental

Export Control