Zn0.6Ga0.4As0.4Se0.6

semiconductor

· Zn0.6Ga0.4As0.4Se0.6

Zn0.6Ga0.4As0.4Se0.6 is a quaternary III-V semiconductor alloy combining zinc, gallium, arsenic, and selenium elements, designed to achieve specific bandgap and lattice-matching properties for optoelectronic applications. This material is primarily investigated in research and specialized manufacturing contexts for infrared detectors, photovoltaic devices, and quantum well structures where tunable electronic properties are critical. The quaternary composition allows engineers to independently optimize bandgap energy and lattice constant—advantages over binary or ternary semiconductors—making it valuable for heterostructure devices requiring precise band alignment, though it remains less mature than conventional GaAs or InP platforms.

infrared detectorssemiconductor heterostructuresoptoelectronic researchphotovoltaic devicesquantum wellsbandgap engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.800	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Zn0.6Ga0.4As0.4Se0.6

Electrical Properties

Regulatory Screening

Environmental

Export Control