Zn0.5Hg0.5Se
semiconductorZn₀.₅Hg₀.₅Se is a narrow-bandgap II-VI semiconductor alloy combining zinc selenide, mercury selenide, and cadmium selenide characteristics, primarily of research and specialized optoelectronic interest. This material is explored for infrared detection and imaging applications where its tunable bandgap energy—intermediate between ZnSe and HgSe—enables sensitivity in the mid-to-long-wavelength infrared region. While not widely deployed in high-volume commercial production, it represents an important experimental platform for understanding bandgap engineering in II-VI systems and remains relevant to thermal imaging, spectroscopy, and military sensing applications where mercury telluride and cadmium zinc telluride alternatives have dominated.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |