Zn0.3Ga0.7P0.7S0.3

semiconductor

· Zn0.3Ga0.7P0.7S0.3

Zn₀.₃Ga₀.₇P₀.₇S₀.₃ is a mixed-anion III-V semiconductor alloy combining gallium phosphide and zinc sulfide constituents, engineered to create a direct bandgap material with tunable optoelectronic properties. This ternary compound sits within the family of wide-bandgap semiconductors and is primarily explored in research contexts for light-emitting and photonic applications where bandgap engineering offers advantages over binary compounds. The substitution of phosphorus with sulfur and zinc incorporation allows control over emission wavelength and device performance, making it of interest where conventional GaP or GaN materials may not meet specific spectral or operational requirements.

optoelectronic emittersvisible-light LED researchphotonic integrated circuitsbandgap-engineered deviceswide-bandgap semiconductor researchtunable emission wavelength applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.300	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Zn0.3Ga0.7P0.7S0.3

Electrical Properties

Regulatory Screening

Environmental

Export Control