Zn0.1Ga0.9Sb0.9Te0.1

semiconductor
· Zn0.1Ga0.9Sb0.9Te0.1

Zn0.1Ga0.9Sb0.9Te0.1 is a quaternary III-V semiconductor alloy combining gallium antimonide (GaSb) with zinc and tellurium dopants, engineered to tune bandgap and electronic properties for infrared and optoelectronic applications. This material belongs to the GaSb family and is primarily explored in research contexts for mid-infrared detectors, thermophotovoltaic devices, and high-speed transistors where bandgap engineering is critical. The zinc and tellurium additions modify carrier concentration and lattice parameters relative to pure GaSb, making this composition relevant for engineers developing narrow-bandgap semiconductors that require temperature stability and infrared sensitivity beyond standard silicon or germanium options.

infrared photodetectorsthermophotovoltaic cellshigh-speed transistorsbandgap engineeringthermal imaging sensorsresearch & development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
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eV——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.