Zn0.01S0.01Ga0.99P0.99

semiconductor
· Zn0.01S0.01Ga0.99P0.99

Zn0.01S0.01Ga0.99P0.99 is a heavily gallium-phosphide-based III-V semiconductor compound with minor zinc and sulfur dopants, representing a modified GaP alloy designed to tune bandgap and optical properties for specific device applications. This material is primarily a research-phase composition used in optoelectronic and photonic devices where the zinc and sulfur additions serve to modify carrier dynamics, luminescence efficiency, or lattice parameters compared to binary GaP. The dopant concentrations suggest potential applications in light-emitting devices, photodetectors, or integrated photonics where bandgap engineering is critical—though this specific composition may be experimental rather than in widespread commercial production.

optoelectronic deviceslight-emitting diodes (LEDs)photodetectorsintegrated photonicsbandgap engineering researchsemiconductor lasers

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
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eV——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.
Zn0.01S0.01Ga0.99P0.99 — Properties & Data | MatWorld