Zn0.01S0.01Ga0.99P0.99 is a heavily gallium-phosphide-based III-V semiconductor compound with minor zinc and sulfur dopants, representing a modified GaP alloy designed to tune bandgap and optical properties for specific device applications. This material is primarily a research-phase composition used in optoelectronic and photonic devices where the zinc and sulfur additions serve to modify carrier dynamics, luminescence efficiency, or lattice parameters compared to binary GaP. The dopant concentrations suggest potential applications in light-emitting devices, photodetectors, or integrated photonics where bandgap engineering is critical—though this specific composition may be experimental rather than in widespread commercial production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.250 | eV | — |