Zn0.01Ga0.99Sb0.99Te0.01

semiconductor

· Zn0.01Ga0.99Sb0.99Te0.01

Zn0.01Ga0.99Sb0.99Te0.01 is a heavily gallium-doped III-V semiconductor compound with zinc and tellurium dopants, engineered to modify the electronic and optical properties of the GaSb base material. This is a research-grade or specialized alloy variant of gallium antimonide, designed for applications requiring tuned band gap energy or carrier concentration that standard GaSb cannot achieve. The dopant combination (1% Zn, 1% Te) makes this compound primarily of academic or advanced device development interest rather than high-volume industrial production.

infrared detectors and optoelectronicsthermoelectric devicesnarrow band-gap semiconductorsresearch applicationshigh-temperature electronicsmaterials development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.7200	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Zn0.01Ga0.99Sb0.99Te0.01

Electrical Properties

Regulatory Screening

Environmental

Export Control