Zn0.01Ga0.99P0.99S0.01
semiconductor· Zn0.01Ga0.99P0.99S0.01
Zn₀.₀₁Ga₀.₉₉P₀.₉₉S₀.₀₁ is a dilute zinc-doped gallium phosphide sulfide compound semiconductor, representing a heavily Ga-P based material with minimal Zn and S substitution. This is a research-phase material exploring band gap engineering and optical properties through controlled doping, rather than a commercial off-the-shelf semiconductor. The zinc and sulfur dopants modify the electronic structure of the baseline GaP host, making it relevant to photonic and optoelectronic device research where tuning emission wavelength or carrier dynamics is the primary goal.
optoelectronic device researchphotonic semiconductorsband gap engineeringvisible light LEDs (experimental)photoluminescence studiescompound semiconductor development
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
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