Zn0.01Ga0.99P0.99S0.01

semiconductor

· Zn0.01Ga0.99P0.99S0.01

Zn₀.₀₁Ga₀.₉₉P₀.₉₉S₀.₀₁ is a dilute zinc-doped gallium phosphide sulfide compound semiconductor, representing a heavily Ga-P based material with minimal Zn and S substitution. This is a research-phase material exploring band gap engineering and optical properties through controlled doping, rather than a commercial off-the-shelf semiconductor. The zinc and sulfur dopants modify the electronic structure of the baseline GaP host, making it relevant to photonic and optoelectronic device research where tuning emission wavelength or carrier dynamics is the primary goal.

optoelectronic device researchphotonic semiconductorsband gap engineeringvisible light LEDs (experimental)photoluminescence studiescompound semiconductor development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.250	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Zn0.01Ga0.99P0.99S0.01

Electrical Properties

Regulatory Screening

Environmental

Export Control