Zn0.01Ga0.99As0.99Se0.01

semiconductor
· Zn0.01Ga0.99As0.99Se0.01

This is a heavily gallium-doped zinc arsenide selenide compound, a III-V semiconductor alloy in which zinc and selenium are present in trace amounts as dopants or constituents within a gallium arsenide matrix. This composition sits at the boundary between GaAs and GaSe semiconductor families and represents a research-phase material rather than a commodity product; such doped arsenide-selenide systems are explored for optoelectronic applications where bandgap engineering and carrier concentration control are critical. The minor substitutions of Zn and Se into the GaAs lattice allow tuning of electronic and optical properties for specialized infrared detectors, laser diodes, or high-frequency devices where precision bandgap and doping profiles are needed.

infrared photodetectorssemiconductor research and developmentoptoelectronic bandgap engineeringhigh-frequency RF devicesquantum well structures

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
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eV——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.
Zn0.01Ga0.99As0.99Se0.01 — Properties & Data | MatWorld